2N6782 document number 3093 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v ds drain source voltage v dgr drain gate voltage (r gs = 1m ? ) i d @ t case = 25c continuous drain current i d @ t case = 100c continuous drain current i dm pulsed drain current 1 v gs gate source voltage p d @ t case = 25c maximum power dissipation p d @ t case = 100c maximum power dissipation junction to case linear derating factor junction to ambient linear derating factor t j , t stg operating and storage temperature range lead temperature ( from case for 10 secs) 100v 100v 3.5a 2.25a 14a 20v 15w 6w 0.12w/c 0.005w/c -55 to +150c 300c mechanical data dimensions in mm (inches) n?channel power mosfet enhancement mode absolute maximum ratings (t case = 25c unless otherwise stated) applications fast switching motor controls power supplies to39 package (to-205af) 0.89 (0.035) max. 12.70 (0.500) min. 4.06 (0.16) 4.57 (0.18) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 0.41 (0.016) 0.53 (0.021) dia. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2.54 (0.100) 5.08 (0.200) typ. 45 1 2 3 pin 1 - source pin 2 - gate pin 3 - drain and case underside view 1 ? 16
parameter test conditions min. typ. max. unit v v na ma a v ? v s ( ) pf ns a a v ns c\w 2N6782 document number 3093 issue 1 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. 100* 2* 4.0* 1* 4.0* 100* 200* -100* 0.25* 1* 1 3.5 2.1* 0.6* 1.08* 1.0* 3.0* 60* 200* 40* 100* 10* 25* 15* 25* 25* 20* 3.5* 14 1.5* 200 8.33* 175 v gs = 0 i d = 0.25ma v ds = v gs i d = 0.5a v ds = 0 t a = 125 c v gs = 20v v ds = 0 t a = 125 c v gs = -20v v ds = 80v. v gs =0 v ds = 100v v gs = 0 t c = 125 c v gs = 10v v gs = 10v i d = 3.5a v gs = 10v i d = 2.25a t c = 125 c v ds = 5v i ds = 2.25a v gs = 0 v ds = 25v f = 1mhz v dd = 34v i d = 2.25a r g = 50 ? r l = 15 ? (mosfet switching times are essentially independent of operating temperature.) modified mos power symbol showing the intergal p-n junction rectifier. i s = 3.5a v gs = 0 t j = 25 c i f =i s t j = 25 c d i / d t = 100a/ s electrical characteristics (t case = 25 c unless otherwise stated) drain ? source breakdown voltage gate threshold voltage gate body leakage forward gate body leakage reverse zero gate voltage drain current on state drain current1 static drain source on-state voltage1 static drain source on-state resistance1 forward transductance 1 input capacitance output capacitance reverse transfer capacitance turn ? on delay time rise time turn ? off delay time fall time continuous source current body diode source current1 (body diode) diode forward voltage 1 reverse recovery time bv dss v gs(th) i gssf i gssr i dss i d(on) v ds(on) r ds(on) gfs c iss c oss c rss t d(on) t r t d(off) t f i s i sm v sd t rr static electrical ratings dynamic characteristics body? drain diode ratings & characteristics ? thermal characteristics r jc r ja notes 1) pulse test: pulse width 300 s, ? 2% * jedec registered values thermal resistance junction ? case thermal resistance junction ? ambient free air operation
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